Инд. авторы:	Surnin Y.A., Klimovskikh I.I., Sostina D.M., Kokh K.A., Tereshchenko O.E., Shikin A.M.
Заглавие:	Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators
Библ. ссылка:	Surnin Y.A., Klimovskikh I.I., Sostina D.M., Kokh K.A., Tereshchenko O.E., Shikin A.M. Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators // Journal of Experimental and Theoretical Physics. - 2018. - Vol.126. - Iss. 4. - P.535-540. - ISSN 1063-7761. - EISSN 1090-6509.
Внешние системы:	WoS: 000434476400011; DOI: 10.1134/S1063776118040088; SCOPUS: 2-s2.0-85048200284;
Реферат:	eng: The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers. © 2018, Pleiades Publishing, Inc.
Ключевые слова:	Topological state; Topological insulators; Quantum-well state; Photoemission spectra; Near surface regions; Dirac cones; Angle resolved photoemission spectroscopy; Ultrathin films; Topology; Tellurium compounds; Selenium compounds; Quantum theory; Quantum computers; Photoelectron spectroscopy; Interfaces (materials); Interface states; Electronic states; Electric insulators; Core levels; Bismuth compounds; Binding energy; Semiconductor quantum wells; Antimony compounds; Ultrathin Pb films;
Издано:	2018
Физ. характеристика:	с.535-540