Инд. авторы:	Atuchin V.V., Golyashov V.A., Kokh K.A., Korolkov I.V., Kozhukhov A.S., Kruchinin V.N., Makarenko S.V., Pokrovsky L.D., Prosvirin I.P., Romanyuk K.N., Tereshchenko O.E.
Заглавие:	Formation of inert Bi2Se3(0001) cleaved surface
Библ. ссылка:	Atuchin V.V., Golyashov V.A., Kokh K.A., Korolkov I.V., Kozhukhov A.S., Kruchinin V.N., Makarenko S.V., Pokrovsky L.D., Prosvirin I.P., Romanyuk K.N., Tereshchenko O.E. Formation of inert Bi2Se3(0001) cleaved surface // Crystal Growth & Design. - 2011. - Vol.11. - Iss. 12. - P.5507-5514. - ISSN 1528-7483. - EISSN 1528-7505.
Внешние системы:	SCOPUS: 2-s2.0-83055164402; DOI: 10.1021/cg201163v;
Реферат:	eng: A high quality inclusion-free Bi2Se3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi2Se3(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi2Se3(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM. © 2011 American Chemical Society.
Ключевые слова:	High quality; Bismuth; X ray photoelectron spectroscopy; Spectroscopic ellipsometry; Scanning tunneling microscopy; Crystal growth from melt; Atomic spectroscopy; Atomic force microscopy; Surface oxidations; Scanning Tunneling Microscopy (stm); Microstructural properties; Heat fields; Crystallographic quality; Core level spectroscopy; Cleaved surfaces; AFM; Ambient conditions;
Издано:	2011
Физ. характеристика:	с.5507-5514